Browsing PhD Theses by Author "Ghodgaonkar, Deepak K."
Now showing items 1-5 of 5
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Adaptive techniques to improve the efficiency of GaN based SSPAs (up to C Band) for geo synchronous satellites
Doshi, Ramesh J. (Dhirubhai Ambani Institute of Information and Communication Technology, 2018)In this thesis, various adaptive techniques to improve the efficiency of Solid State Power Amplifier (SSPA) for Geo Synchronous Satellite are presented. The Microwave Power Amplifiers (MPAs) being the most important ... -
Compact Circularly Polarized Tri-, Dual- and Single-Band Dielectric Resonator Antennas
Chaudhary, Pankaj Prabhubhai (Dhirubhai Ambani Institute of Information and Communication Technology, 2021)The Dielectric Resonator Antennas (DRAs) have received wide attention due to low loss, high radiation efficiency, small size, wider bandwidth and simple feed network as compared to the microstrip antennas. Microstrip ... -
Design of Broadband Microwave Absorbers using Carbonyl Iron Filled Silicon Rubber Sheets in the Frequency Range of 1 to 8.2 GHz
Vashisth, Rahul (Dhirubhai Ambani Institute of Information and Communication Technology, 2022)For microwave absorber applications, carbonyl iron (CI) powder is a commonly used filler material in silicon rubber because of the high value of attenuation coefficients (50.56 dB/cm), high curie temperature, good temperature ... -
Microwave Imaging for Breast Cancer Detection using 3D Level Set based Optimization, FDTD Method and Method of Moments
Patel, Hardik Nayankumar (Dhirubhai Ambani Institute of Information and Communication Technology, 2019)Microwave imaging is emerging as new diagnostic option for breast cancer detection because of non-ionizing nature of microwave radiation and significant contrast between dielectric properties of healthy and malignant breast ... -
MMIC based high power transmit/receive and receive protection switches with integrated LNAs
Rao, Ch. V. Narasimha (Dhirubhai Ambani Institute of Information and Communication Technology, 2019)The conventional high power microwave signal switching component is the Silicon/GaAs PIN diode, while the recently GaN pHEMT devices are being used for this application. GaAs FET, used as switching element as a PIN diode ...