Analysis of charge injection in a MOS analog switch with impedance on source side

Abstract

Turning off of a transistor introduces error voltage at the output of Sample and Hold circuits which are the key components of Analog to Digital Converters (ADCs) and hence limits their accuracy of performance in high switching applications. The error voltage at output is mainly caused because of charge injection due to the carriers released from the channel and due to coupling through gate-to diffusion overlap capacitances. Hence, in order to fully understand the behaviour of charge injection in the presence of source impedance, a device is modelled and simulated in Pisces. This thesis is about modelling of an N-type Metal Oxide Semiconductor (NMOS) device in Pisces Postmini Tool with a hold capacitor on drain side, so that it can be used as a CMOS Analog switch. The main aim is to analyze the trends in output error voltage in the presence of source resistance. The output error caused due to charge injection is examined as a function of different parameters like gate voltage fall time, source resistance, input voltage, substrate concentration etc. Test structures similar to the one modelled in Pisces is simulated in 0.18μm CMOS technology for the verification purpose. It is shown that the modelled and simulated results exhibit good trend agreement.